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5A/100V高耐压 封装SOT23-3 N沟道场效应管参数
Description
The IT5N10 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 100V,ID = 5A Rds < 200mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
产品技术资料下载5N10.PDF
